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BF2040...
Silicon N-Channel MOSFET Tetrode * For low noise , high gain controlled input stages up to 1GHz * Operating voltage 5 V
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF2040 BF2040R BF2040W
Maximum Ratings Parameter
Package SOT143 SOT143 SOT343 1=S 1=D 1=D 2=D 2=S 2=S
Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 -
Marking NFs NFs NF
Symbol VDS ID IG1/2SM +VG1SE Ptot
Value 8 20 10 7 200 200
Unit V mA V mW
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS 76 C, BF2040, BF2040R TS 94 C, BF2040W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF2040, BF2040R BF2040W
Tstg Tch Symbol
Rthchs
-55 ... 150 150
C
Value
370 280
Unit K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Feb-25-2004
BF2040...
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 20 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A VG2S(p) 0.3 0.7 VG1S(p) 0.3 0.6 V IDSX 15 mA IDSS 50 A +IG2SS 50 +IG1SS 50 nA +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 10 V Symbol min. Values typ. max. Unit
2
Feb-25-2004
BF2040...
Electrical Characteristics Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, I D = 15 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4 ...0 V , f = 800 GHz G p 45 50 F 1.6 2.2 dB Gp 20 23 dB Cdss 1.6 Cg1ss 2.9 3.4 pF gfs 37 42 mS Values typ. max. Unit
3
Feb-25-2004
BF2040...
Total power dissipation Ptot = (TS) BF2040, BFD2040R Total power dissipation Ptot = (TS) BF2040W
220
mW
220
mA
180 160
180 160
P tot
140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150
P tot
140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150
TS
TS
Drain current ID = (IG1) VG2S = 4V
28 mA 24 22 20
Output characteristics ID = (V DS) VG2S = 4 V VG1S = Parameter
26 mA 22 20 18
1.3V
1.4V
ID
ID
18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70
A
16 14 12 10 8 6 4 2
1V 1.1V 1.2V
90
0 0
1
2
3
4
5
6
7
8
V
10
IG1
VDS
4
Feb-25-2004
BF2040...
Gate 1 current IG1 = (V G1S) VDS = 5V VG2S = Parameter
195 A
4V
Gate 1 forward transconductance g fs = (ID) VDS = 5V, VG2S = Parameter
45
mS 4V
165 150 135
3.5V
35 30 25 20
2.5V
3.5V 3V 2.5V 2V
I G1
120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4
V 2V 3V
g fs
15 10 5 0 0
3.2
4
8
12
16
20
24
28
32 mA
40
VG1S
ID
Drain current ID = (VG1S) VDS = 5V VG2S = Parameter
28 mA 24 22 20
4V 3V
Drain current ID = (V GG) VDS = 5V, VG2S = 4V, RG1 = 80k
(connected to VGG, V GG=gate1 supply voltage)
16
mA
12
ID
16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V 1.5V 2V
ID
18
10
8
6
4
2
2
0 0
1
2
3
V
5
VG1S
VGG
5
Feb-25-2004
BF2040...
Drain current ID = (VGG) VG2S = 4V RG1 = Parameter in k
28 mA 24 22 20
90 70 80
ID
18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6
V
110 130
8
VGG=VDS
6
Feb-25-2004

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